EC29004: Devices Laboratory
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EC29004 | |||||||||||||||||||||||||||
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Course name | Devices Laboratory | ||||||||||||||||||||||||||
Offered by | Electronics & Electrical Communication Engineering | ||||||||||||||||||||||||||
Credits | 2 | ||||||||||||||||||||||||||
L-T-P | 0-0-3 | ||||||||||||||||||||||||||
Previous Year Grade Distribution | |||||||||||||||||||||||||||
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Semester | {{{semester}}} |
Syllabus
Syllabus mentioned in ERP
MODULES:
A. CHARACTERISATION LAB (ICSE LAB 3RD FLOOR ECE DEPT)
1. JFET Characterization 2. Diode Breakdown Characteristics 3. Capacitance âVoltage Characteristics of a PN Junction (Doping profile) 4. High frequency Characteristics of BJT. 5. SCR Characteristics. 6. Hall Effect.
B. TCAD SILVCO SIMULATION (CIC- DOE VLSI LAB)
C. FABRICATION LAB (VLSI AND MEMS LAB- GROUND FLOOR)
1 oral Viva and lab expt in characteristaion lab along with lab manual (partners)
1 lab manual (individual) in FABRICATION LAB
1 lab report (3 expts ) in Simulation lab
1 written mcq test (40 questions) final