EC60201: Semiconductor Device Modeling

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EC60201
Course name Semiconductor Device Modeling
Offered by Electronics & Electrical Communication Engineering
Credits 4
L-T-P 3-1-0
Previous Year Grade Distribution
1
1
5
5
2



EX A B C D P F
Semester Autumn


Syllabus

Syllabus mentioned in ERP

Pre-requisites: EC21007Review of semiconductor physics: Quantum foundation, Carrier scattering, high field effects; P- N junction diode modeling: Static model, Large signal model and SPICE models; BJT modeling: Ebers â Moll, Static, large-signal, small- signal models. Gummel - Poon model. Temperature and area effects. Power BJT model, SPICE models, Limitations of GP model; Advanced Bipolar models: VBIC, HICUM and MEXTARM;MOS Transistors: LEVEL 1, LEVEL 2 ,LEVEL 3, BSIM, HISIMVEKV Models, Threshold voltage modeling. Punch through. Carrier velocity modeling. Short channel effects. Channel length modulation. Barrier lowering, Hot carrier effects. Mobility modeling, Model parameters; Analytical and Numerical modeling of BJT and MOS transistors: Introduction to variou


Concepts taught in class

Student Opinion

How to Crack the Paper

Classroom resources

Additional Resources

Time Table

Day 8:00-8:55 am 9:00-9:55 am 10:00-10:55 am 11:00-11:55 am 12:00-12:55 pm 2:00-2:55 pm 3:00-3:55 pm 4:00-4:55 pm 5:00-5:55 pm
Monday A102
Tuesday
Wednesday A102 A102
Thursday A102
Friday