MS60023: Epitaxy Of Compound Semiconductors
| MS60023 | |||||||||||||||||||
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| Course name | EPITAXY OF COMPOUND SEMICONDUCTORS | ||||||||||||||||||
| Offered by | Materials Science | ||||||||||||||||||
| Credits | 4 | ||||||||||||||||||
| L-T-P | 3-1-0 | ||||||||||||||||||
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| Semester | {{{semester}}} | ||||||||||||||||||
Syllabus
Syllabus mentioned in ERP
Pre-requisite: None Introduction-Device driven need and challenges of epitaxy, gas kinetics. Deposition, Epitaxy and Chemical Vapour Deposition. Thermodynamics and other theoretical aspects. Metal Organic Vapour Phase Epitaxy – Principles and process design. Metal organic source molecules, Kinetics Liquid Phase Epitaxy, Chloride Based Epitaxy, Selective Area Growth, Heteroepitaxy Molecular Beam Epitaxy In situ characterization of epitaxial films. Defects in epitaxial films Heteroepitaxy Epitaxy and applications of nanostructures Epitaxy and applications of GaN, AlGaN etc. Waste management in epitaxy Epitaxy in an industrial environment Epitaxy and applications of specific materials. SiC – Materials, epitaxy and applications. Si-Ge – Materials, and epitaxy and applications. Laser ablation techniques for oxide deposition
Concepts taught in class
Student Opinion
How to Crack the Paper
Classroom resources
Additional Resources
Time Table
| Day | 8:00-8:55 am | 9:00-9:55 am | 10:00-10:55 am | 11:00-11:55 am | 12:00-12:55 pm | 2:00-2:55 pm | 3:00-3:55 pm | 4:00-4:55 pm | 5:00-5:55 pm | |
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| Monday | In Dept | In Dept | ||||||||
| Tuesday | In Dept | In Dept | ||||||||
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