MT60133: Principles Of Nanostructured Interfaces For Thin Film Semiconductor
| MT60133 | |
|---|---|
| Course name | Principles Of Nanostructured Interfaces For Thin Film Semiconductor |
| Offered by | Metallurgical & Materials Engineering |
| Credits | 3 |
| L-T-P | 3-0-0 |
| Previous Year Grade Distribution | |
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| Semester | Autumn |
Syllabus
Syllabus mentioned in ERP
Introduction, metals, insulators and semiconductors - crystal structure and bonding, concepts of electron energy bands and electrical conductivity; classification of semiconductors, narrow and wide band-gap semiconductors, quantum well lasers, strained-layer superlattices, misfit dislocations and critical thickness concepts, current transport and electronic properties of interfaces-effect of alloying, p-n junction theory, principles of MOSFET, metallization of semiconductors, thermodynamics and kinetics of silicide formation, applications of semiconductors in light emitting devices, switching devices, photovoltaics and solar cells, sensors and MEMS as functional devices, dilute magnetic semiconductors and spintronics; fundamental principles (nucleation and growth, diffusion and mass transport) and techniques of processing semiconductor devices and heterostructures - nucleation and growth of thin films, modern epitaxial methods, thin film deposition methods, ion implantation, rapid thermal processing, fundamentals of microfabrication, etc.; structure-property relationships- structure of interfaces, types of defects and their influence on properties and performance, methods to inhibit formation of defects, experimental techniques to measure and quantify defects in thin films.