EC61415: Advanced Semiconductor Devices

From Metakgp Wiki
Jump to navigation Jump to search
EC61415
Course name Advanced Semiconductor Devices
Offered by Electronics & Electrical Communication Engineering
Credits 3
L-T-P 3-0-0
Previous Year Grade Distribution
{{{grades}}}
Semester Spring


Syllabus

Syllabus mentioned in ERP

Pre-requisites: EC21007Electronic properties and technologies: SiGe and Group III-V compound semiconductors; Advanced HBT Devices: SiGe, GaAs, InP, GaN; Advanced Field Effect Devices: Heterostructure Field Effect Transistors (HFETs), Modulation Doped Field Effect Transistors (MODFETs), High Electron Mobility Transistors (HEMTs); Resonant Tunneling Devices (RTDs); Single Electron Transistors (SETs); Strained layer supperlattices and quantum well devices; RF and digital applications; Noise Characteristics; HBT Modelling; Heterojunction device simulation


Concepts taught in class

Student Opinion

How to Crack the Paper

Classroom resources

Additional Resources

Time Table

Day 8:00-8:55 am 9:00-9:55 am 10:00-10:55 am 11:00-11:55 am 12:00-12:55 pm 2:00-2:55 pm 3:00-3:55 pm 4:00-4:55 pm 5:00-5:55 pm
Monday F102 F102
Tuesday F102
Wednesday
Thursday
Friday